ME3920-G mosfet equivalent, dual n-channel 30v (d-s) mosfet.
FEATURES
* RDS(ON)≦24mΩ@ VGS =10V
* RDS(ON)≦46mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maxim.
* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter
* The Ordering I.
The ME3920-G is the Dual N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularl.
Image gallery
TAGS
Download (Size : 896.72KB)