* RDS(ON)≦32mΩ@VGS=10V
* RDS(ON)≦40mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC curre.

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter Ordering Informa.

The ME35N06P is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly sui.

ME35N06

ME35N06-G

ME35N06F

ME35N06F-G

ME35N06G

ME35N06P-G

ME35N06T

ME35N06T-G

ME35N10

ME35N10-G

ME3500

ME3500-G

ME3587

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts