ME35N06-G datasheet, mosfet equivalent, Matsuki

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Features and benefits

* RDS(ON)≦32mΩ@VGS=10V
* RDS(ON)≦40mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC curre.

Application

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter (TO-252-3L) Top .

Description

The ME35N06-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly su.

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