* RDS(ON) ≦45mΩ@VGS=4.5V (N-Ch)
* RDS(ON) ≦68mΩ@VGS=2.5V (N-Ch)
* RDS(ON) ≦120mΩ@VGS=1.8V (N-Ch)
* RDS(ON) ≦110mΩ@VGS=-4.5V (P-Ch)
* RDS(ON)≦130mΩ@VGS.

* Power Management in Note.

The ME3587 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices ar.

ME3587-G

ME3500

ME3500-G

ME35N06

ME35N06-G

ME35N06F

ME35N06F-G

ME35N06G

ME35N06P

ME35N06P-G

ME35N06T

ME35N06T-G

ME35N10

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