* RDS(ON) ≦35mΩ@VGS=10V (N-Ch)
* RDS(ON) ≦52mΩ@VGS=4.5V (N-Ch)
* RDS(ON) ≦70mΩ@VGS=-10V (P-Ch)
* RDS(ON) ≦95mΩ@VGS=-4.5V (P-Ch)
* Super high density c.

* Power Management in Note book
* Portable Equipment
* DC/DC Converter
* Loa.

The ME3500 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices ar.

ME3500

ME3587

ME3587-G

ME35N06

ME35N06-G

ME35N06F

ME35N06F-G

ME35N06G

ME35N06P

ME35N06P-G

ME35N06T

ME35N06T-G

ME35N10

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