Datasheet Details
| Part number | ME2N7002W |
|---|---|
| Manufacturer | Matsuki |
| File Size | 854.65 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 ME2N7002W Datasheet
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General Description
The ME2N7002W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Key Features
- Simple Drive Requirement.
- Small Package Outline.
- ROHS Compliant Mechanical data.
- High density cell design for low RDS(ON).
- Voltage controlled small signal switching.
- Rugged and reliable.
- High saturation current capability.
- High-speed switching.
- Not thermal runaway.
- The soldering temperature and time shall not exceed 260℃ for more than 10 seconds.