* Simple Drive Requirement
* Small Package Outline
* ROHS Compliant Mechanical data
* High density cell design for low RDS(ON)
* Voltage controlled sm.

The ME2N7002W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are pa.

ME2N70023D2-G

ME2N70023E1-G

ME2N7002D

ME2N7002D1KW-G

ME2N7002D2

ME2N7002D2-G

ME2N7002D2KW-G

ME2N7002DA

ME2N7002DA-G

ME2N7002DKW-G

ME2N7002DW

ME2N7002E

ME2N7002E-G

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