ME2N7002F1W - N-Channel MOSFET

Matsuki

General Description

The ME2N7002F1W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)≦8Ω@VGS=4V.
RDS(ON)≦13Ω@VGS=2.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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ME2N7002F1W n-channel mosfet by Matsuki - Datasheet Preview

Datasheet Details

Part number	ME2N7002F1W
Manufacturer	Matsuki
File Size	858.35 KB
Description	N-Channel MOSFET
Datasheet	ME2N7002F1W Datasheet

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Part Number	Description
ME2N7002F1W-G	N-Channel MOSFET
ME2N7002F1KW	Dual N-Channel MOSFET
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ME2N7002F	N-Channel MOSFET
ME2N7002F-G	N-Channel MOSFET

Full PDF Text Transcription (Reference)

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ME2N7002F1W/ME2N7002F1W -G N-Channel 60V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME2N7002F1W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURES ● RDS(ON)≦8Ω@VGS=4V ● RDS(ON)≦13Ω@VGS=2.