* RDS(ON)≦8Ω@VGS=4V
* RDS(ON)≦13Ω@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current c.

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter (SOT-23) Top Vie.

The ME2N7002F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION F.

ME2N70023D2-G

ME2N70023E1-G

ME2N7002D

ME2N7002D1KW-G

ME2N7002D2

ME2N7002D2-G

ME2N7002D2KW-G

ME2N7002DA

ME2N7002DA-G

ME2N7002DKW-G

ME2N7002DW

ME2N7002E

ME2N7002E-G

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