ME2N7002F-G - N-Channel MOSFET

Matsuki

Download the ME2N7002F-G datasheet PDF. This datasheet also covers the ME2N7002F variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME2N7002F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)≦8Ω@VGS=4V.
RDS(ON)≦13Ω@VGS=2.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

ME2N7002F-G n-channel mosfet by Matsuki - Datasheet Preview — Note: The manufacturer provides a single datasheet file (ME2N7002F-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	ME2N7002F-G
Manufacturer	Matsuki
File Size	605.50 KB
Description	N-Channel MOSFET
Datasheet	ME2N7002F-G Datasheet

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Other Datasheets by Matsuki

Part Number	Description
ME2N7002F	N-Channel MOSFET
ME2N7002F1KW	Dual N-Channel MOSFET
ME2N7002F1KW-G	Dual N-Channel MOSFET
ME2N7002F1W	N-Channel MOSFET
ME2N7002F1W-G	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

ME2N7002F/ME2N7002F -G N-Channel 60V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME2N7002F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURES ● RDS(ON)≦8Ω@VGS=4V ● RDS(ON)≦13Ω@VGS=2.