ME2N7002DKW-G mosfet equivalent, dual n-channel mosfet.
* RDS(ON)≦3Ω@VGS=10V
* RDS(ON)≦4Ω@VGS=4.5V
* RDS(ON)≦4.5Ω@VGS=3V
* ESD Protection HBM >2KV
* Super high density cell design for extremely low RDS(ON)
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* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter
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The ME2N7002DKW-G is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These device.
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