ME2N7002DA-G, ME2N7002DA Datasheet - Matsuki

ME2N7002DA-G N-Channel MOSFET

The ME2N7002DA is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such.

ME2N7002DA-G Features

* RDS(ON) ≦4Ω@VGS=10V

* RDS(ON) ≦4Ω@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* Capable doing Cu wire bonding APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Ba

ME2N7002DA-Matsuki.pdf

ME2N7002DA-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME2N7002DA-G, ME2N7002DA. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME2N7002DA-G, ME2N7002DA

Manufacturer:

Matsuki

File Size:

873.84 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME2N7002DA-G, ME2N7002DA.
Please refer to the document for exact specifications by model.

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ME2N7002DA-G ME2N7002DA N-Channel MOSFET Matsuki

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