ME2345A-G datasheet, mosfet equivalent, Matsuki

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Features and benefits

* RDS(ON) ≦68mΩ@VGS=-10V
* RDS(ON) ≦80mΩ@VGS=-4.5V
* RDS(ON) ≦100mΩ@VGS=-2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional.

Application

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC e.

Description

The ME2345A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.

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