ME2322-G mosfet equivalent, n-channel 55v (d-s) mosfet.
* RDS(ON)≦80mΩ@VGS=10V
* RDS(ON)≦90mΩ@VGS=4.5V
* RDS(ON)≦120mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-re.
* Power Management in Note book
* Portable Equipment
* Load Switch
* DSC
(SOT-23) Top View
e Ordering .
The ME2322 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are partic.
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