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ME2320DS-G Datasheet N-Channel 20V (D-S) MOSFET

Manufacturer: Matsuki

Download the ME2320DS-G datasheet PDF. This datasheet also includes the ME2320DS variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (ME2320DS-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME2320DS-G
Manufacturer Matsuki
File Size 1.24 MB
Description N-Channel 20V (D-S) MOSFET
Download ME2320DS-G Download (PDF)

General Description

The ME2320DS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.

Overview

Preliminary-ME2320DS/ME2320DS-G N-Channel 20V (D-S) MOSFET , ESD Protection.

Key Features

  • RDS(ON)=21mΩ@VGS=4.5V.
  • RDS(ON)=25 mΩ@VGS=2.5V.
  • RDS(ON)=33 mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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