ME2320DS-G datasheet, mosfet equivalent, Matsuki

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 1.24MB)

Features and benefits

* RDS(ON)=21mΩ@VGS=4.5V
* RDS(ON)=25 mΩ@VGS=2.5V
* RDS(ON)=33 mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-.

Application

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.

Description

The ME2320DS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.

Image gallery