ME2320DS-G
Description
The ME2320DS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
Key Features
- RDS(ON)=21mΩ@VGS=4.5V
- RDS(ON)=25 mΩ@VGS=2.5V
- RDS(ON)=33 mΩ@VGS=1.8V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
