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ME2320DS-G - N-Channel 20V (D-S) MOSFET

Product Overview

Matsuki

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ME2320DS-G N-Channel 20V (D-S) MOSFET by Matsuki - Datasheet Preview — Datasheet preview – ME2320DS-G

Datasheet Details

Part number	ME2320DS-G
Manufacturer	Matsuki
File Size	1.24 MB
Description	N-Channel 20V (D-S) MOSFET
Datasheet	ME2320DS-G Datasheet
Note	This datasheet PDF includes multiple part numbers: ME2320DS-G, ME2320DS. Please refer to the document for exact specifications by model.
Additional preview pages of the ME2320DS-G datasheet.

Product details

Description

The ME2320DS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

RDS(ON)=21mΩ@VGS=4.5V.
RDS(ON)=25 mΩ@VGS=2.5V.
RDS(ON)=33 mΩ@VGS=1.8V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Mar 20, 2018 |