ME2317D-G mosfet equivalent, p-channel 30v (d-s) mosfet.
* RDS(ON) ≦45mΩ@VGS=-10V
* RDS(ON) ≦53mΩ@VGS=-4.5V
* RDS(ON) ≦80mΩ@VGS=-2.5V
* Typical ESD performance 3KV
* Super high density cell design for extrem.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC
T.
The ME2317D-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are pa.
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