FEATURES
* RDS(ON)≦37mΩ@ VGS =10V
* RDS(ON)≦49mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maxim.

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter PIN CONFIGURATIO.

The ME2306S is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suit.

ME2306

ME2306-G

ME2306A

ME2306A-G

ME2306AS

ME2306AS-G

ME2306D

ME2306D-G

ME2306DS

ME2306DS-G

ME2306S-G

ME2301

ME2301-G

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