ME2306DS-G mosfet equivalent, n-channel 30v (d-s) mosfet.
* RDS(ON)≦31mΩ@VGS=10V
* RDS(ON)≦52mΩ@VGS=4.5V
* ESD Protected
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance .
* Power Management in Note book
* Portable Equipment
* Load Switch
Ordering Information: ME2306DS(Pb-free) .
The ME2306DS is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are par.
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