ME2306D-G Datasheet, Matsuki

* RDS(ON)≦31mΩ@VGS=10V
* RDS(ON)≦52mΩ@VGS=4.5V
* ESD Protected
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance .

* Power Management in Note book
* Portable Equipment
* Load Switch e Ordering Information: ME2306D(Pb-free).

The ME2306D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.