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ME2306AS - N-Channel 30V (D-S) MOSFET

General Description

The ME2306AS is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular pho

Key Features

  • RDS(ON)≦32mΩ@VGS=10V.
  • RDS(ON)≦38mΩ@VGS=4.5V.
  • RDS(ON)≦50mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME2306AS
Manufacturer Matsuki
File Size 1.01 MB
Description N-Channel 30V (D-S) MOSFET
Datasheet download datasheet ME2306AS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel 30V (D-S)MOSFET ME2306AS/ME2306AS-G GENERAL DESCRIPTION The ME2306AS is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View FEATURES ● RDS(ON)≦32mΩ@VGS=10V ● RDS(ON)≦38mΩ@VGS=4.5V ● RDS(ON)≦50mΩ@VGS=2.