ME2306AS-G mosfet equivalent, n-channel 30v (d-s) mosfet.
* RDS(ON)≦32mΩ@VGS=10V
* RDS(ON)≦38mΩ@VGS=4.5V
* RDS(ON)≦50mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-res.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.
The ME2306AS is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suite.
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