* RDS(ON)≦85mΩ@VGS=4.5V
* RDS(ON)≦115mΩ@VGS=2.5V
* RDS(ON)≦130mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-.

* Power Management in Notebook
* Portable Equipment
* Load Switch
* DSC (SOT-23) Top View e Ordering I.

The ME2302D is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited.

ME2302

ME2302-G

ME2302D-G

ME2301

ME2301-G

ME2301A

ME2301A-G

ME2301DC

ME2301DC-G

ME2301GC

ME2301GC-G

ME2303

ME2303-G

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