ME2302D-G mosfet equivalent, n-channel 20v (d-s) mosfet.
* RDS(ON)≦85mΩ@VGS=4.5V
* RDS(ON)≦115mΩ@VGS=2.5V
* RDS(ON)≦130mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-.
* Power Management in Notebook
* Portable Equipment
* Load Switch
* DSC
(SOT-23) Top View
e Ordering I.
The ME2302D is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited.
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