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ME2302 - N-Channel 20V (D-S) MOSFET

General Description

The ME2302 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

Key Features

  • RDS(ON)≦85mΩ@VGS=4.5V.
  • RDS(ON)≦115mΩ@VGS=2.5V.
  • RDS(ON)≦130mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME2302
Manufacturer Matsuki
File Size 1.33 MB
Description N-Channel 20V (D-S) MOSFET
Datasheet download datasheet ME2302 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel 20V(D-S) MOSFET GENERAL DESCRIPTION The ME2302 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View ME2302/ME2302-G FEATURES ● RDS(ON)≦85mΩ@VGS=4.5V ● RDS(ON)≦115mΩ@VGS=2.5V ● RDS(ON)≦130mΩ@VGS=1.