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ME20P03F-G - P-Channel MOSFET

Download the ME20P03F-G datasheet PDF. This datasheet also covers the ME20P03F variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The ME20P03F is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application.

Features

  • RDS(ON)≦31.5mΩ@VGS=-10V.
  • RDS(ON)≦44mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME20P03F-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME20P03F-G
Manufacturer Matsuki
File Size 904.75 KB
Description P-Channel MOSFET
Datasheet download datasheet ME20P03F-G Datasheet

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Other Datasheets by Matsuki

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ME20P06-G P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
P-Channel 30V (D-S) MOSFET ME20P03F/ME20P03F-G GENERAL DESCRIPTION The ME20P03F is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. PIN CONFIGURATION FEATURES ● RDS(ON)≦31.5mΩ@VGS=-10V ● RDS(ON)≦44mΩ@VGS=-4.
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