* RDS(ON)≦3.5mΩ@VGS=10V
* RDS(ON)≦4.7mΩ@VGS=5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC curre.

* Power Management
* DC/DC Converter
* Load Switch e Ordering Information: ME200N04T (Pb-free) ME200N04T-G .

The ME200N04T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION (TO.

ME200N04T-G

ME20N03

ME20N10

ME20N10-G

ME20N15

ME20N15-G

ME20P03

ME20P03-G

ME20P03F

ME20P03F-G

ME20P06

ME20P06-G

ME20P06P

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