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ME15N25-G Datasheet

Manufacturer: Matsuki

This datasheet includes multiple variants, all published together in a single manufacturer document.

ME15N25-G datasheet preview

Datasheet Details

Part number ME15N25-G
Datasheet ME15N25-G ME15N25 Datasheet (PDF)
File Size 1.08 MB
Manufacturer Matsuki
Description N-Channel 250V (D-S) MOSFET
ME15N25-G page 2 ME15N25-G page 3

ME15N25-G Overview

The ME15N25 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application.

ME15N25-G Key Features

  • RDS(ON)≦265mΩ@VGS=10V
  • Super high density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current

ME15N25 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
VBsemi Logo ME15N25 N-Channel 250V MOSFET VBsemi
Matsuki logo - Manufacturer

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