Download the ME15N10-G datasheet PDF.
This datasheet also covers the ME15N10 variant, as both devices belong to the same n-channel 100-v (d-s) mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
ME15N10/ME15N10-G
Key Features
RDS(ON)≦100mΩ@VGS=10V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability
The ME15N10 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage.
Full PDF Text Transcription for ME15N10-G (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
ME15N10-G. For precise diagrams, and layout, please refer to the original PDF.
N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION ME15N10/ME15N10-G FEATURES ● RDS(ON)≦100mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exception...
View more extracted text
● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability The ME15N10 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
ME15N10-G Datasheet
