ME13N10A-G datasheet, mosfet equivalent, Matsuki

Features and benefits

* RDS(ON) ≦145mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS.

Application

* DC/DC Converter
* Load Switch
* LCD/ LED Display inverter PIN CONFIGURATION (TO-252-3L) Top View * The .

Description

The ME13N10A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.

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