Datasheet4U Logo Datasheet4U.com

ME1303AT3-G - P-Channel Enhancement Mode Mosfet

Download the ME1303AT3-G datasheet PDF. This datasheet also covers the ME1303AT3 variant, as both devices belong to the same p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The ME1303AT3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • -20V/-3.4A,RDS(ON)=95mΩ@VGS=-4.5V.
  • -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V.
  • -20V/-1.7A,RDS(ON)=180mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME1303AT3-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME1303AT3-G
Manufacturer Matsuki
File Size 965.01 KB
Description P-Channel Enhancement Mode Mosfet
Datasheet download datasheet ME1303AT3-G Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ME1117 1.0A Adjustable Voltage High Speed LDO Regulators Microne
ME1117A12 1.0A Adjustable Voltage High Speed LDO Regulators Microne
ME1117A18 1.0A Adjustable Voltage High Speed LDO Regulators Microne
ME1117A25 1.0A Adjustable Voltage High Speed LDO Regulators Microne
ME1117A33 1.0A Adjustable Voltage High Speed LDO Regulators Microne

Other Datasheets by Matsuki

Part Number Description
ME1303AT3 P-Channel Enhancement Mode Mosfet
ME1303 P-Channel 20V (D-S) MOSFET
ME1303-G P-Channel 20V (D-S) MOSFET
ME1303S P-Channel 20V (D-S) MOSFET
ME1303S-G P-Channel 20V (D-S) MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
P-Channel Enhancement MOSFET ME1303AT3/ME1303AT3-G GENERAL DESCRIPTION The ME1303AT3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-323) Top View FEATURES ● -20V/-3.4A,RDS(ON)=95mΩ@VGS=-4.5V ● -20V/-2.4A,RDS(ON)=120mΩ@VGS=-2.5V ● -20V/-1.7A,RDS(ON)=180mΩ@VGS=-1.