ME1303 datasheet, mosfet equivalent, Matsuki

Features and benefits

* RDS(ON) ≦95mΩ@VGS=-4.5V
* RDS(ON) ≦120mΩ@VGS=-2.5V
* RDS(ON) ≦180mΩ@VGS=-1.8V
* Super high density cell design for extremely low RDS(ON)
* Exception.

Application

* Power Management in Note book
* Portable Equipment
* Load Switch
* DSC PIN CONFIGURATION (SOT-23) To.

Description

The ME1303 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.

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