MT2501 mosfet equivalent, p-channel mosfet.
¾ -100V/-10A, RDS(ON) =205mΩ @ VGS = -10V ¾ -100V/-10A, RDS(ON) =225mΩ @ VGS = -7V ¾ Super high density cell design for extremely
ultra low RDS(ON) ¾ Exceptional on-resis.
¾ POWER Management ¾ Portable Equipment ¾ DC/DC Converter ¾ Load Switch ¾ DSC
Drain
123 G DS
Gate
Source
-1-
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MT2501
P- Channel Enhancement Mode MOSFET
The MT2501 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize o.
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