SLW60R080SS mosfet equivalent, n-channel mosfet.
- 47A, 600V, RDS(on) typ.= 68mΩ@VGS =10 V - Low gate charge ( typical 88nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
G
S
.
This Power MOSFET is producFeeadtuurseisng Maple semi‘s
Advanced
Super-Junction
technology. - 7.6A, 500V,
RDS(on)
typ.
=
0.5Ω@VGS
=
10
V
This advanced technology has-bLoewegnateeschpaergcei(atyllpyicatal i2l5onrCe)d
to minimize conduction.
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