SLP50R240SJ mosfet equivalent, n-channel mosfet.
-18A, 500V, RDS(on) typ.= 0.21Ω@VGS = 10 V
- Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
43nC)
D
.
This Power MOSFET is producFeeadtuurseisng Maplesemi‘s
Advanced Super-Junction This advanced technology
theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy. i=cat0al .5i2lΩo5@nrCeV)dGS
=
10
V
to minimize conduction loss, pr-oH.
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