- 4.0A, 600V, RDS(on)Typ= 2.0Ω@VGS = 10 V - Low gate charge ( typical 13.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability Abso.

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in.

SLP4N60C

SLP4N65C

SLP4N65S

SLP4N65UZ

SLP4N70C

SLP40N26C

SLP4R-2

SLP4S-2

SLP-1xxx-51

SLP-2xxx-51

SLP-3117E-51

SLP-3130C-81

SLP-3131C-81

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