SLP2N60UZ Datasheet, Maple Semiconductor

- 2,0A, 600V, RDS(on)typ = 4Ω@VGS = 10 V - Low gate charge ( typical 5.8nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS T.

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in.