-11A, 800V, RDS(on) typ.= 0.46Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 38nC) DD.

This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy. i=cat0al .5i2lΩo5@nrCeV)dGS = 10 V to minimize conduction loss, pr-o.

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