- 8,0A, 500V, RDS(on)typ = 0.8Ω@VGS = 10 V - Low gate charge ( typical 15.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS.

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in.

SLF840C

SLF80R240SJ

SLF80R380SJ

SLF80R500SJ

SLF80R600SJ

SLF80R850SJ

SLF830S

SLF830UZ

SLF8N60C

SLF8N60U

SLF8N65C

SLF8N65S

SLF8N65U

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