- 11A, 650V, RDS(on) typ.= 330mΩ@VGS =10 V - Low gate charge ( typical 17.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G .

This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction technology. This advanced technology has--bL7o.e6wAe,gn5a0tee0Vsch,paRerDgSce(oi(na)ttylylppy.i=cat0al.5i2lΩ5on@rCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdre.

SLF65R300SJ

SLF65R190SJ

SLF65R420SJ

SLF65R500SJ

SLF65R700SJ

SLF65R950SJ

SLF60R080SS

SLF60R190SJ

SLF60R190SS

SLF60R280SJ

SLF60R380SJ

SLF60R460SJ

SLF60R650SJ

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