SLF60R190SS mosfet equivalent, n-channel mosfet.
- 22A, 600V, RDS(on) typ.= 150mΩ@VGS =10 V - Low gate charge ( typical 42nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
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This Power MOSFET is producFeeadtuurseisng Maple semi‘s
Advanced Super-Junction technology. This advanced technology has--bL7o.e6wAe,gn5a0tee0Vsch,paRerDgSce(oi(na)ttylylppy.i=cat0al.5i2lΩ5on@rCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdre.
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