logo

SLD65R2K6SJ Datasheet, Maple Semiconductor

SLD65R2K6SJ mosfet equivalent, n-channel mosfet.

SLD65R2K6SJ Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 627.85KB)

SLD65R2K6SJ Datasheet

Features and benefits

- 2.3A, 650V, RDS(on) typ. = 2.3Ω@VGS = 10 V - Low gate charge ( typical 7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D .

Description

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the ava.

Image gallery

SLD65R2K6SJ Page 1 SLD65R2K6SJ Page 2 SLD65R2K6SJ Page 3

TAGS

SLD65R2K6SJ
N-Channel
MOSFET
Maple Semiconductor

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts