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SLD4N60C Datasheet, Maple Semiconductor

SLD4N60C mosfet equivalent, n-channel mosfet.

SLD4N60C Avg. rating / M : 1.0 rating-11

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SLD4N60C Datasheet

Features and benefits

- 4.5A, 600V, RDS(on) = 2.0Ω(typ)@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D.

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in.

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TAGS

SLD4N60C
N-Channel
MOSFET
SLD4N65C
SLD4N70C
SLD40-018
Maple Semiconductor

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