- 7.0A, 800V, RDS(on) = 1.9Ω@VGS = 10 V - Low gate charge ( typical 40nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GS D2.

such as DC/DC converters and high efficiency switching for power management in portable and battery operated products. D.

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in.

SLB7N60C

SLB7N65C

SLB70R340SJ

SLB-05VDC

SLB-05VDC-S-L

SLB-06VDC

SLB-06VDC-S-L

SLB-09VDC

SLB-09VDC-S-L

SLB-12VDC

SLB-12VDC-S-L

SLB-18VDC

SLB-18VDC-S-L

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