- 40A, 260V, RDS(on) typ. = 0.12Ω@VGS = 10 V - Low gate charge ( typical 55 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D .

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in.

SLB4N60C

SLB4N65C

SLB-05VDC

SLB-05VDC-S-L

SLB-06VDC

SLB-06VDC-S-L

SLB-09VDC

SLB-09VDC-S-L

SLB-12VDC

SLB-12VDC-S-L

SLB-18VDC

SLB-18VDC-S-L

SLB-24VDC

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