SLB12N65C mosfet equivalent, n-channel mosfet.
- 12A, 650V, RDS(on) typ. = 0.6Ω@VGS = 10 V - Low gate charge ( typical 47nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D D
.
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 379.35KB)