MSP120N08G mosfet equivalent, 80v n-channel mosfet.
- 120A, 80V, RDS(TYP) = 5.5mΩ@VGS = 10 V - Low gate charge ( typical 59 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
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GDS.
Features
- 120A, 80V, RDS(TYP) = 5.5mΩ@VGS = 10 V - Low gate charge ( typical 59 nC) - High ruggedness - Fast switchin.
This Power MOSFET is produced using Maple semi‘s advanced technology. which provides high performance in on-state resistance, fast switching performance and excellent quality. MSP120N08G suitable device forSynchronous Rectification For Server and gen.
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