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MSF10120V1 - Silicon Carbide Diode

Features

  • -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Benefits -Higher safety margin against overvoltage -Improved efficiency all load conditions -Increased efficiency compared to Silicon Diode alternatives -Reduction of Heat Sink Requirements -Parallel Devices Without Thermal Runaway -Essentialy No Switching Losses.

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Datasheet Details

Part number MSF10120V1
Manufacturer Maple Semiconductor
File Size 260.80 KB
Description Silicon Carbide Diode
Datasheet download datasheet MSF10120V1 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSF10120V1 MSF10120V1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Benefits -Higher safety margin against overvoltage -Improved efficiency all load conditions -Increased efficiency compared to Silicon Diode alternatives -Reduction of Heat Sink Requirements -Parallel Devices Without Thermal Runaway -Essentialy No Switching Losses Applications -Switch Mode Power Supplies -Power Factor Correction -Motor Drives -HID Lighting Cathode Package Type : TO-220F2 1、Cathode 2、Anode Anode Pin1 Pin2 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VRRM Rep
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