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MDD1752 - N-Channel MOSFET

General Description

Low RDS(ON), low gate charge can be offering superior benefit in the application.

Key Features

  •  VDS = 40V  ID = 50A @VGS = 10V  RDS(ON) < 8.0mΩ @ VGS = 10V < 10.5mΩ@ VGS = 4.5V.

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Datasheet Details

Part number MDD1752
Manufacturer MagnaChip Semiconductor
File Size 1.18 MB
Description N-Channel MOSFET
Datasheet download datasheet MDD1752 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDD1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ MDD1752 N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description The MDD1752 uses advanced Magnachip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application. Features  VDS = 40V  ID = 50A @VGS = 10V  RDS(ON) < 8.0mΩ @ VGS = 10V < 10.5mΩ@ VGS = 4.