MMD65R900Q - N-channel MOSFET

MagnaChip

General Description

MMD65R900Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge.

It will provide much high efficiency by using optimized charge coupling technology.

Key Features

Low power loss by high speed switching and low on-resistance.
100% avalanche tested.
Green package.
Pb-free plating, Halogen-free.

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MMD65R900Q n-channel mosfet by MagnaChip - Datasheet Preview

Datasheet Details

Part number	MMD65R900Q
Manufacturer	MagnaChip
File Size	1.48 MB
Description	N-channel MOSFET
Datasheet	MMD65R900Q Datasheet

Full PDF Text Transcription for MMD65R900Q (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MMD65R900Q. For precise diagrams, and layout, please refer to the original PDF.

MMD65R900Q Datasheet MMD65R900Q 650V 0.90Ω N-channel MOSFET  Description MMD65R900Q is power MOSFET using Magnachip’s advanced super junction technology that can realize...

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using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj, max RDS(on), max VGS(th), typ ID Qg, typ Value 700 0.90 3 4.7 11.

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