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MDU2511S - N-Channel Trench MOSFET

Description

The MDU2511S uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDU2511S is suitable device for DC/DC Converter and general purpose applications.

Features

  • à VDS = 30V à ID = 188A @VGS = 10V à RDS(ON) < 1.7 mΩ @VGS = 10V < 2.1 mΩ @VGS = 4.5V à 100% UIL Tested à 100% Rg Tested à SBD Built In D D DD D D DD D S S SG GS SS PDFN56 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=100oC TA=25oC TA=70oC TC=25oC TC=100oC TA=25oC TA=70oC Thermal Char.

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Datasheet Details

Part number MDU2511S
Manufacturer MagnaChip
File Size 750.43 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDU2511S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDU2511S – Single N-Channel Trench MOSFET 30V MDU2511S Single N-channel Trench MOSFET 30V, 188A, 1.7mΩ General Description The MDU2511S uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU2511S is suitable device for DC/DC Converter and general purpose applications. Features à VDS = 30V à ID = 188A @VGS = 10V à RDS(ON) < 1.7 mΩ @VGS = 10V < 2.1 mΩ @VGS = 4.