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MDS9652E Datasheet, MagnaChip

MDS9652E mosfet equivalent, n-p channel trench mosfet.

MDS9652E Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 1.46MB)

MDS9652E Datasheet
MDS9652E
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 1.46MB)

MDS9652E Datasheet

Features and benefits

N-Channel  VDS = 30V  ID = 7.2A @ VGS = 10V  RDS(ON) <23m @ VGS = 10V <30m @ VGS = 4.5V P-Channel VDS = -30V ID = -6.1A @ VGS = -10V RDS(ON) <38m @ VGS = -10V <52.

Application

 Inverters  General purpose applications 5(D2) 6(D2) 7(D1) 8(D1) D1 D2 4(G2) 3(S2) 2(G1) 1(S1) G1 G2 S1 S2 Abso.

Description

The MDS9652E uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Features N-Channel  VDS = 30V  ID = 7.2A @ VGS = 10V  RDS(ON) <23m @ VGS = 10V <30m @ VGS = 4.5V .

Image gallery

MDS9652E Page 1 MDS9652E Page 2 MDS9652E Page 3

TAGS

MDS9652E
N-P
Channel
Trench
MOSFET
MagnaChip

Manufacturer


MagnaChip

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